Source of nitrogen atoms of amorphous carbon nitride films fabricated with microwave-plasma CVD processes
نویسندگان
چکیده
منابع مشابه
Nitrogen modification of hydrogenated amorphous carbon films
The effect of nitrogen addition on the structural and electronic properties of hydrogenated amorphous carbon ~a-C:H! films has been characterized in terms of its composition, sp bonding fraction, infrared and Raman spectra, optical band gap, conductivity, and paramagnetic defect. The variation of conductivity with nitrogen content suggests that N acts as a weak donor, with the conductivity firs...
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Nitrogenated and hydrogenated amorphous carbon (a-C:H:N) films have been deposited by a plasma beam source using a gas mixture of C2H2 , Ar and N2 . The Ar/C2H2 ratio is kept constant at a ratio of 3, with the nitrogen flow allowed to vary. Nonnitrogenated films, with Ar/C2H2 ratios of 3 and 6 were also deposited and analyzed before attempting to identify the modifications to the microstructura...
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Electrical properties and annealing behaviour of undoped and doped amorphous silicon carbon nitride (a-SiC N ) thin films, x y deposited by ion beam sputtering techniques, have been studied. Doping of the a-SiC N thin films with magnesium (Mg), and x y phosphorous (P) was carried out by ion implantation techniques, and subsequent annealing effect on the electrical conductivity (s) and activatio...
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We report on the growth of amorphous carbon nitride films sa-CNxd showing the highest conductivity to date. The films were prepared using a layer-by-layer method sa-CNx :LLd, by the cyclical nitrogen radical sputtering of a graphite radical, alternated with a brief hydrogen etch. The photosensitivity S of these films is 105, defined as the ratio of the photoconductivity sp to the dark conductiv...
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ژورنال
عنوان ژورنال: Transactions of the Materials Research Society of Japan
سال: 2013
ISSN: 1382-3469,2188-1650
DOI: 10.14723/tmrsj.38.31